Reduced PricesOffersContact UsHelpTrack Orderspo polsku
Register
0
0 Itemszł0.00
ex VAT
ex VAT

384W Single IGBTs:

3 Products Found
Find a huge range of 384W Single IGBTs at Farnell Poland. We stock a wide range of Single IGBTs, such as 250W, 150W, 200W & 100W Single IGBTs from the worlds top manufacturers including: Onsemi
View
Buyer
Engineer
Manufacturer
Continuous Collector Current
Collector Emitter Saturation Voltage
Power Dissipation
Collector Emitter Voltage Max
Transistor Case Style
No. of Pins
Operating Temperature Max
Transistor Mounting
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
NGTB20N120IHRWG
ONSEMI NGTB20N120IHRWG
2399109

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. IGBT
  2. 40 A
  3. 2.1 V
  4. 384 W
  5. 1.2 kV
  6. TO-247
  7. 3 Pins
Each
1+
zł10.720
10+
zł9.120
Min: 1 / Mult: 1
40A
2.1V
384W
1.2kV
TO-247
3Pins
175°C
Through Hole
NGTB40N120IHRWG
ONSEMI NGTB40N120IHRWG
2399112

Data Sheet

RoHS

ONSEMI
  1. IGBT
  2. 80 A
  3. 2.3 V
  4. 384 W
  5. 1.2 kV
  6. TO-247
  7. 3 Pins
Each
1+
zł17.470
10+
zł17.220
100+
zł17.090
500+
zł17.050
1000+
zł16.580
Min: 1 / Mult: 1
80A
2.3V
384W
1.2kV
TO-247
3Pins
175°C
Through Hole
NGTB30N120IHRWG
ONSEMI NGTB30N120IHRWG
2399110

Data Sheet

RoHS

ONSEMI
  1. IGBT
  2. 60 A
  3. 2.2 V
  4. 384 W
  5. 1.2 kV
  6. TO-247
  7. 3 Pins
Each
1+
zł21.270
10+
zł15.450
100+
zł13.380
250+
zł12.660
500+
zł11.900
More Pricing...
Min: 1 / Mult: 1
60A
2.2V
384W
1.2kV
TO-247
3Pins
175°C
Through Hole
1-3 of 3 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

Bipolar Pre-Biased / Digital Transistor
ONSEMI
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
Norton Secured
BSI 9001
Visa
Mastercard
PayPal
Trade Account