LTC4446IMS8E#PBF

LTC4446 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages upto 100V. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance. This device’s pull-up for the top gate driver has a peak output current of 2.5A and its pull-down has an output impedance of 1.2 Ohm. The pull-up for the bottom gate driver has a peak output current of 3A and the pull-down has an output impedance of 0.55 Ohm. It is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at upto 114V above ground. It contains undervoltage lockout circuits that disable the external MOSFETs when activated. It is widely used in application such as distributed power architectures, automotive power supplies, high density power modules, telecommunication systems etc.

• Wide VCC voltage is 7.2V to 13.5V
• TG peak pull-up current is 2.5A typical at (TA = 25°C, VCC = VBOOST = 12V)
• BG peak pull-up current is 3A typical at (TA = 25°C, VCC = VBOOST = 12V)
• Drives both high and low side N-channel MOSFETs
• Undervoltage lockout
• TG output fall time is 5ns typical at (10% – 90%, CL = 1nF, TA = 25°C, VCC = VBOOST = 12V)
• TG output rise time is 8ns typical at (10% – 90%, CL = 1nF, TA = 25°C, VCC = VBOOST = 12V)
• BG output rise time is 6ns typical at (10% – 90%, CL = 1nF, TA = 25°C, VCC = VBOOST = 12V)
• BG output fall time is 3ns typical at (10% – 90%, CL = 1nF, TA = 25°C, VCC = VBOOST = 12V)
• Operating temperature is -40°C to 85°C, package style is 8-lead plastic MSOP

Notes

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