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BSS123-7-F
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | zł0.920 |
| 50+ | zł0.560 |
| 100+ | zł0.350 |
| 500+ | zł0.250 |
| 1500+ | zł0.220 |
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Multiple: 5
zł4.60 (ex VAT)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS123-7-F
Order Code1843725
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
BSS123-7-F is a N-channel enhancement mode field effect transistor. It is produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. This product has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor controls, power MOSFET gate drivers, switching applications.
- Low gate threshold voltage, low input capacitance, fast switching speed
- Low input/output leakage, high drain-source voltage rating
- Drain-source voltage is 100V at TA = +25°C
- Continuous gate-source voltage is ±20V at TA=+25°C, VGS = 10V
- Pulsed continuous drain current is 0.68A at TA=+25°C, VGS = 10V
- Power dissipation is 300mW at TA = +25°C
- Static drain-source on-resistance is 3.2ohm typ at VGS = 10V, ID = 0.17A, TA = +25°C
- Drain-source breakdown voltage is 100V min at VGS = 0V, ID = 250µA, TA = +25°C
- SOT23 package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008