Print Page
ZXMP6A13FQTA
Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
4,007 In Stock
Need more?
EXPRESS Delivery in 1-2 business days
Order before 5pm
FREE Standard Delivery
on orders zł0.00 and above
Accurate delivery times will be calculated at checkout
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | zł0.920 |
| 500+ | zł0.810 |
| 1500+ | zł0.740 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
zł112.00 (ex VAT)
A zł20.00 re-reeling charge will be added for this product
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMP6A13FQTA
Order Code3127505RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.1A
Drain Source On State Resistance0.4ohm
On Resistance Rds(on)0.4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd625mW
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Product Overview
ZXMP6A13FQTA is a P-channel enhancement mode MOSFET. This MOSFET is designed to meet the stringent requirements of automotive applications. Typical applications include DC - DC converters, power management functions, relay and solenoid driving, motor control.
- Fast switching speed, low input capacitance, low gate charge
- Qualified to AEC-Q101 standards for high reliability, PPAP capable
- Drain-source voltage is -60V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is -1.1A at TA=+70°C, VGS=-10V
- Pulsed drain current is -4.0A at TA=+25°C
- Continuous source current (body diode) is -1.2A at TA=+25°C
- Pulsed source current (body diode) is -4.0A at TA=+25°C
- SOT23 (type DN) case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.4ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation Pd
625mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Continuous Drain Current Id
1.1A
On Resistance Rds(on)
0.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000318