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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | zł435.080 |
| 5+ | zł422.970 |
| 10+ | zł410.820 |
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG2R120MT33J
Order Code3598634
Product RangeG2R
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id35A
Drain Source Voltage Vds3.3kV
Drain Source On State Resistance0.12ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4.5V
Power Dissipation402W
Operating Temperature Max175°C
Product RangeG2R
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.12ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
3.3kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
402W
Product Range
G2R
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001393