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ManufacturerINFINEON
Manufacturer Part NoSKW25N120FKSA1
Order Code1056536
Also Known AsSKW25N120 , SP000012571
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoSKW25N120FKSA1
Order Code1056536
Also Known AsSKW25N120 , SP000012571
Technical Datasheet
Continuous Collector Current46A
Collector Emitter Saturation Voltage3.6V
Power Dissipation313W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The SKW25N120 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode addressing soft switching/resonant and hard switching topologies. Eoff is 30% lower when compared to previous generation combined with low conduction losses. NPT technology offers very tight parameter distribution and temperature stable behaviour.
- Short circuit withstand time 10μs
- Designed for operation above 30kHz
- High ruggedness
- Parallel switching capability
Applications
Power Management, Alternative Energy, Microwave, Industrial
Technical Specifications
Continuous Collector Current
46A
Power Dissipation
313W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
3.6V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006