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IRL6342PBF
Power MOSFET, N Channel, 30 V, 9.9 A, 0.012 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL6342PBF
Order Code1890091
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id9.9A
Drain Source On State Resistance0.012ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The IRL6342PBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, high side and low side load switch.
- Industry standard package for multi-vendor compatibility
- Halogen-free
- Logic level
- Consumer qualification MSL-1 (increased reliability)
Applications
Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Product Range
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005