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NDPL180N10BG
Power MOSFET, N Channel, 100 V, 180 A, 2500 µohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDPL180N10BG
Order Code2492873
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id180A
Drain Source On State Resistance2500µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Alternatives for NDPL180N10BG
3 Products Found
Product Overview
The NDPL180N10BG is a N-channel Power MOSFET offers 100V drain source voltage and 180A drain current.
- Ultra-low ON-resistance
- Low gate charge
- High speed switching
- 100% Avalanche tested
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
180A
Transistor Case Style
TO-220
Rds(on) Test Voltage
15V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
2500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536