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NGTB20N120IHWG.
IGBT, 40 A, 2.2 V, 341 W, 1.2 kV, TO-247, 3 Pins
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB20N120IHWG.
Order Code2492857
Technical Datasheet
Continuous Collector Current40A
Collector Emitter Saturation Voltage2.2V
Power Dissipation341W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The NGTB20N120IHWG is an Insulated Gate Bipolar Transistor features a robust and field-stop (FS) Trench construction, provides and superior performance in demanding switching applications and offers low ON-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
- Extremely efficient Trench with field-stop technology
- Low switching loss - Reduces system power dissipation
- Optimized for low losses in IH cooker application
Applications
HVAC, Consumer Electronics, Power Management
Technical Specifications
Continuous Collector Current
40A
Power Dissipation
341W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004083