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NGTB40N60IHLWG.
IGBT, 80 A, 2 V, 250 W, 600 V, TO-247, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB40N60IHLWG.
Order Code2321655
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage2V
Power Dissipation250W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Alternatives for NGTB40N60IHLWG.
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Product Overview
The NGTB40N60IHLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
- Low saturation voltage using Trench with field-stop technology
- Low switching loss - Reduces system power dissipation
- Low gate charge
- Low conduction loss
Applications
HVAC, Power Management
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
250W
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542