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SCT4026DEHRC11
Silicon Carbide MOSFET, AEC-Q101, Single, N Channel, 56 A, 750 V, 0.026 ohm, TO-247N
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | zł65.030 |
| 5+ | zł61.190 |
| 10+ | zł57.310 |
| 50+ | zł53.470 |
| 100+ | zł49.590 |
| 250+ | zł48.020 |
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zł65.03 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT4026DEHRC11
Order Code4064761
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id56A
Drain Source Voltage Vds750V
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.8V
Power Dissipation176W
Operating Temperature Max175°C
Product Range-
SVHCLead (23-Jan-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
56A
Drain Source On State Resistance
0.026ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
175°C
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Drain Source Voltage Vds
750V
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation
176W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003