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Quantity | Price (ex VAT) |
---|---|
1+ | zł3.190 |
10+ | zł1.960 |
100+ | zł1.740 |
500+ | zł1.380 |
1000+ | zł1.240 |
5000+ | zł0.990 |
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zł3.19 (ex VAT)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBDX34C
Order Code1015774
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd70W
DC Collector Current10A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Complementary to the BDX33C
- Well-controlled hFE parameter for increased reliability
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
70W
RF Transistor Case
TO-220
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability