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BUL1403ED
Bipolar (BJT) Single Transistor, NPN, 650 V, 250 mA, 80 W, TO-220, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBUL1403ED
Order Code1084521
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max650V
Continuous Collector Current250mA
Power Dissipation80W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min18hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
250mA
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
18hFE
Product Range
-
Collector Emitter Voltage Max
650V
Power Dissipation
80W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002