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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | zł1.140 |
| 10+ | zł0.920 |
| 100+ | zł0.780 |
| 500+ | zł0.770 |
| 1000+ | zł0.710 |
| 5000+ | zł0.650 |
Price for:Each
Minimum: 5
Multiple: 5
zł5.70 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1480DH-T1-GE3
Order Code2364056
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.2ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1480DH-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch applications.
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, LED Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
SOT-363
Rds(on) Test Voltage
10V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability