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SI2336DS-T1-GE3
Power MOSFET, N Channel, 30 V, 5.2 A, 0.042 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | zł1.570 |
| 10+ | zł1.210 |
| 100+ | zł1.030 |
| 500+ | zł0.810 |
| 1000+ | zł0.730 |
| 5000+ | zł0.600 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
zł1.57 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-GE3
Order Code1858945
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.2A
Drain Source On State Resistance0.042ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- N-channel 30V (D-S) TrenchFET® power MOSFET
- 100% Rg tested
- Used in DC/DC converters, boost converters
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008