Print Page
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7635DP-T1-GE3
Order Code2646394RL
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id40A
Drain Source On State Resistance4900µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation54W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Alternatives for SI7635DP-T1-GE3
2 Products Found
Product Overview
The SI7635DP-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and adaptor/battery switch applications.
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
40A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
54W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
4900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000243