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IMT4T108
Bipolar Transistor Array, Dual PNP, 120 V, 50 mA
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerROHM
Manufacturer Part NoIMT4T108
Order Code1680347RL
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP120V
Continuous Collector Current NPN-
Continuous Collector Current PNP50mA
Power Dissipation NPN-
Power Dissipation PNP300mW
DC Current Gain hFE Min NPN-
DC Current Gain hFE Min PNP180hFE
Transistor Case StyleSOT-457
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP140MHz
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
120V
Continuous Collector Current PNP
50mA
Power Dissipation PNP
300mW
DC Current Gain hFE Min PNP
180hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
140MHz
Qualification
-
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
-
Power Dissipation NPN
-
DC Current Gain hFE Min NPN
-
Transistor Case Style
SOT-457
Transistor Mounting
Surface Mount
Transition Frequency NPN
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000035