HMC632LP5E

HMC632LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. It is widely used in application such as point to point/multipoint radio, test equipment & industrial controls, SATCOM, military end-use etc.

• Dual output: Fo = 14.25GHz to 15.65GHz, Fo/2 = 7.125GHz to 7.825GHz
• Phase noise is -107dBc/Hz typical at (100KHz, TA = +25°C)
• No external resonator needed
• Tune voltage range is 2V to 13V
• Supply current is 350mA typical at (TA = +25°C)
• Output return loss is 2dB typical at (TA = +25°C)
• Frequency drift rate is 1MHz/°C typical at (TA = +25°C)
• Operating temperature is -40°C to +85°C
• Package style is 32-lead SMT

Uwagi

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