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Ilość | Cena (bez VAT) |
---|---|
1+ | 178,210 zł |
10+ | 151,370 zł |
25+ | 146,050 zł |
100+ | 140,690 zł |
250+ | 137,660 zł |
Informacje o produkcie
Specyfikacja
HMC514LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCOs. The HMC514LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. Applications include VSAT radio, point to point/multipoint radio, test equipment & industrial controls, military end-use.
- No external resonator needed, frequency range from 11.17 to 12.02GHz
- Power output is +10dBm maximum at (RFOUT, TA = +25°C)
- SSB phase noise is -110dBc/Hz typical at (100KHz offset, Vtune= +5V at RFOUT)
- Tune voltage range from 2V to 13V
- Supply current is 275mA typical at (TA = +25°C)
- Output return loss is 2dB typical at (TA = +25°C)
- Frequency drift rate is 1.2MHz/°C typical at (TA = +25°C)
- Tune port leakage current (Vtune= 13V) is 10µA maximum at (TA = +25°C)
- Operating temperature range from -40°C to +85°C
- 32-lead SMT package
Uwagi
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Specyfikacje techniczne
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3V
-40°C
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SMD, 5mm x 5mm
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85°C
No SVHC (21-Jan-2025)
Dokumentacja techniczna (1)
Ustawodawstwo i kwestie dotyczące ochrony środowiska
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