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Ilość | Cena (bez VAT) |
---|---|
1+ | 59,420 zł |
10+ | 48,020 zł |
25+ | 46,040 zł |
Informacje o produkcie
Specyfikacja
HMC717ALP3E is a GaAs PHEMT MMIC low-noise amplifier that is ideal for fixed wireless and LTE/WiMAX/4G base station front-end receivers operating between 4.8GHz and 6GHz. This amplifier has been optimized to provide 1.1dB noise figure, 14.5dB gain and +29.5dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. It can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. It is widely used in applications such as BTS & infrastructure, repeaters and femtocells, public safety radio, access points etc.
- Gain variation over temperature is 0.005dB/ °C typ at (TA = +25°C)
- Input return loss is 8dB typ at (TA = +25°C, Rbias = 825 ohms for Vdd = 5V)
- Output return loss is 13dB typ at (TA = +25°C, Rbias = 825 ohms for Vdd = 5V)
- Output power for 1dB compression is 12dBm typ at (TA = +25°C, Rbias = 825 ohms for Vdd = 5V)
- Total supply current is 31mA typical at (TA = +25°C, Rbias = 825 ohms for Vdd = 5V)
- Operating temperature is 40°C to +85°C
- Package style is 6-lead QFN
Uwagi
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Specyfikacje techniczne
4.8GHz
14.5dB
QFN-EP
2.7V
-40°C
-
MSL 3 - 168 godzin
6GHz
1.3dB
16Pins
5.5V
85°C
-
No SVHC (21-Jan-2025)
Dokumentacja techniczna (2)
Ustawodawstwo i kwestie dotyczące ochrony środowiska
Kraj, w którym odbył się ostatni istotny etap procesu produkcjiKraj pochodzenia:Philippines
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RoHS
RoHS
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