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Ilość | Cena (bez VAT) |
---|---|
1+ | 454,450 zł |
10+ | 411,410 zł |
25+ | 403,180 zł |
100+ | 394,950 zł |
Informacje o produkcie
Specyfikacja
HMC753 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise, wideband amplifier. The P1dB output power of upto 18dBm at 1GHz to 6 GHz enables the low-noise amplifier (LNA) to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. It also features I/Os that are dc blocked and internally matched to 50 ohm, making the device ideal for high capacity microwave radios or very small aperture terminal (VSAT) applications. It is widely used in applications such as point to point radios, point to multipoint radios, military and space, test instrumentation etc.
- Noise figure is 1.5dB at (TA = 25°C, VDD = 5V, IDD = 55mA)
- Gain is 16.5dB typical at (TA = 25°C, VDD = 5V, IDD = 55mA)
- Output power for 1dB compression (P1dB) is 18dBm typ at (TA = 25°C, VDD = 5V, IDD = 55mA)
- Supply voltage (VDD) is 5V
- Supply current is 55mA typ at (VDD = 5V, set VGG2 = 1.5V, VGG1 = −0.8 V typ
- Operating temperature is -40°C to +85°C
- Package style is 24-lead lead frame chip scale [LFCSP-VQ]
Uwagi
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Specyfikacje techniczne
1GHz
16.5dB
QFN-EP
-
-40°C
-
MSL 1 - nieograniczone
11GHz
2dB
24Pins
5V
85°C
-
No SVHC (21-Jan-2025)
Dokumentacja techniczna (1)
Ustawodawstwo i kwestie dotyczące ochrony środowiska
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