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Ilość | Cena (bez VAT) |
---|---|
1+ | 81,700 zł |
5+ | 77,230 zł |
10+ | 72,750 zł |
50+ | 65,070 zł |
100+ | 62,880 zł |
250+ | 60,010 zł |
Informacje o produkcie
Specyfikacja
PVT212PBF is a PVT212 series thru-hole mounting, single-pole, normally-open HEXFET® Power MOSFET photovoltaic relay. This microelectronic power IC can replace electromechanical relays in many applications. It utilizes International Rectifier’s proprietary HEXFET power MOSFET as the output switch, driven by an integrated circuit photovoltaic generator of novel construction. The output switch is controlled by radiation from a GaAlAs light emitting diode (LED) which is optically isolated from the photovoltaic generator. This SSR is specifically designed for industrial control and peripheral telecom applications. Series PVT212 Relays are packaged in a 6-lead moulded DIP package with either thru-hole or surface mount (‘gull-wing’) terminals. applications include control of AC (up to 90VAC) industrial loads, control of DC industrial loads up to +/-120VDC, telecom line switching.
- HEXFET power MOSFET output, bounce-free operation
- 4,000VRMS I/O isolation, very low on-resistance (RDD-ON)
- Linear AC/DC operation, solid-state reliability
- UL recognized
- 4000V human body model, 500V machine model ESD tolerance
- Operating voltage range from 0 to ±150V peak
- 1.0pF maximum capacitance, input-output (Vd=0V, f=1MHz, TA = +25°C)
- 100pF maximum output capacitance at 50VDC, f=1MHz
- 4000V maximum dielectric strength
- 6 lead DIP package,Operating temperature range from -40 to +85°C
Specyfikacje techniczne
SPST-NO (1 Form A)
AC/DC
550mA
Przewlekane
pin PC
4kV
1µA
No SVHC (27-Jun-2018)
SPST-NO
150V
DIP-6
25mA
0.75ohm
1pF
HEXFET PVT212PbF
Dokumentacja techniczna (2)
Ustawodawstwo i kwestie dotyczące ochrony środowiska
Kraj, w którym odbył się ostatni istotny etap procesu produkcjiKraj pochodzenia:Philippines
Kraj, w którym odbył się ostatni istotny etap procesu produkcji
RoHS
RoHS
Świadectwo zgodności produktu