CSC2690A

The CSC2690A is a high-voltage NPN silicon transistor designed for reliable performance in medium-current applications. With a collector-emitter voltage rating of 160V and a current rating of 1.2A, this transistor is optimized for switching and amplification tasks where robustness and efficiency are crucial. Housed in a compact TO-126-3 package, the CSC2690A is well-suited for a variety of electronic designs. The CSC2690A transistor is a dependable and versatile NPN component, ideal for high-voltage and medium-current applications. Its high voltage rating, moderate current handling, and compact TO-126-3 package make it a valuable choice for various electronic circuits and systems.

• Collector-Emitter Voltage (Vceo): 160V
• Collector-Base Voltage (Vcbo): 160V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1.2A
• Base Current (Ib): Varies based on application
• Power Dissipation (Pd): Typically up to 1.5W, depending on thermal management and mounting conditions
• DC Current Gain (hFE): Typically ranges from 50 to 150 at Ic = 1A, Vce = 10V (values can vary based on specific conditions)
• Package Type: TO-126-3
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Package Dimensions: Compact design, suitable for space-constrained applications
• Junction Temperature (Tj): -55°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): Approximately 100°C/W (depends on heat sinking and mounting)